[Courtesy of Samsung Electronics]
Samsung Electronics announced Tuesday that the company started its mass production of the industry's first 10-nanometer(nm) class 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and module. Due to rising demands for the DDR4 in personal computers and IT networks industry, Samsung's latest tech is expected to accelerate the industry's shift towards DDR4 product usage.
The South Korean tech giant was able to 10nm class DRAM, which is the first time in the industry by tackling technical challenges in DRAM scaling. Samsung mastered the challenge by applying argon fluoride (ArF) immersion lithography without using the extreme UV applying method.
Samsung succeeded in creation of 10nm DRAM by applying new circuit design and quadruple patterning lithography. Samsung plans to advance its new DRAM tech to solidify its position in the smartphone market.
"Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry," said Jun Young-Hyun, President of Memory Business, Samsung Electronics. "In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users."
The new DRAM will transfer data at a rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than previous 20nm DDR4 DRAM (2,400 Mbps). Also, according to Samsung, the new 10nm DRAM consumes 10 to 20 percent less power when compared to 20nm DRAM.
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