SEOUL, November 4 (AJP) — SK hynix announced plans Monday to start production of the world’s first 16-layer high bandwidth memory (HBM) chips early next year.
At the SK AI Summit 2024 in Seoul, CEO Kwak Noh-jung said the upcoming 48GB HBM3E chip, currently under development, demonstrates an 18 percent improvement in training performance and a 32 percent increase in inference capabilities over 12-layer versions in simulation studies.
The chip uses Advanced MR-MUF (mass reflow-molded under fill) technology, with hybrid bonding in development as a backup. SK hynix plans to provide samples to customers in early 2025.
“We aim to grow as a full-stack AI memory provider through close collaboration with customers, partners and stakeholders,” Kwak stated during his keynote.
Looking forward, SK hynix plans to incorporate logic processing into the base die for HBM4 in partnership with a leading global foundry, while also advancing CXL (compute express link) and computational storage solutions to meet AI-driven memory needs.
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