SK hynix said it will apply its 1c-nanometer process to next-generation high-bandwidth memory, HBM4E, to strengthen performance competitiveness.
In a conference call held after its first-quarter earnings release on the 23rd, the company said HBM4E is being developed in close consultation with customers, with sample shipments targeted for the second half of the year and mass production aimed for 2027. It added that it plans to apply the 1c-nanometer process to the core die to meet customer performance requirements.
SK hynix also underscored the maturity of the process. The company said the 1c-nanometer node entered mass production in late 2025 and has already proven its performance in the market, with yields and production capability reaching stable levels. It said it will continue its technology leadership by ensuring on-time development, stable mass production and high quality through additional in-house technology work and customer validation.
* This article has been translated by AI.
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