Samsung Electronics has begun supplying samples of its next-generation high-bandwidth memory (HBM), the HBM4E 12-layer, to global clients. This move follows the mass production shipment of HBM4 in February, further solidifying Samsung's technological leadership in the AI memory market.
As of May 29, industry sources report that Samsung is the first in the world to ship HBM4E 12-layer samples. The new product utilizes 1c DRAM and 4-nanometer logic dies, operating stably at speeds of 14 Gbps per pin and capable of reaching up to 16 Gbps. The bandwidth for a single stack is approximately 3.6 TB per second.
Samsung stated that the HBM4E 12-layer product improves energy efficiency by 16% compared to its predecessor and enhances thermal resistance characteristics by over 14%. The capacity is set at 48 GB, with plans to expand the lineup to include 32 GB 8-layer and 64 GB 16-layer products in the future.
Market research firm TrendForce previously assessed that Samsung is ahead in HBM4 verification due to improved process stability. The shipment of HBM4E samples is seen as a continuation of Samsung's recovery of leadership since the HBM4 generation. Analysts note that the company is not only achieving high yields but also maintaining a competitive edge in speed, thereby strengthening trust with key clients.
* This article has been translated by AI.
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