SEOUL, June 02 (AJP) - Samsung Electronics on Tuesday showcased a mock-up of its next-generation High Bandwidth Memory 5 (HBM5) chips and introduced a new thermal management technology at the Computex exhibition in Taipei.
The South Korean tech giant is moving to secure its position in the expanding artificial intelligence (AI) memory sector, following its recent mass production of HBM4 and sample shipments of HBM4E chips.
Song Jae-hyuk, Chief Technology Officer of Samsung’s Device Solutions (DS) division, stated at the event that turnkey solutions spanning memory, foundry, logic, and packaging are becoming increasingly critical as AI infrastructure demands higher performance and density.
To address overheating issues in advanced AI systems, Samsung introduced its Heat Path Block (HPB) technology for HBM5. The HPB design lowers thermal resistance and improves operational stability by creating additional heat dissipation paths, specifically targeting the physical layer (PHY) of the chip.
Samsung noted that it has already implemented and verified the HPB technology in its HBM4E chips to ensure structural and package reliability. The company plans to fully integrate HPB into its upcoming HBM5 lineup, which will also feature a 2-nanometer base die.
During the exhibition, Samsung also displayed its HBM4E wafers and chipsets. The HBM4E integrates a 1c-nanometer DRAM core die with Samsung’s own 4-nanometer foundry base die. Having commenced sample shipments on May 29, the HBM4E operates at a pin speed of 14 Gbps, with the capacity to reach up to 16 Gbps, delivering a maximum bandwidth of 4 Terabytes per second (TB/s).
Market research firm Omdia projects the global HBM market will more than triple from approximately $58.9 billion in 2026 to $198.3 billion by 2029.
Samsung also highlighted its supply chain role for Nvidia Corp's next-generation Vera Rubin AI platform. A Vera Rubin system equipped with Samsung memory was displayed at the pavilion. According to the company, it is currently the only vendor capable of supplying a comprehensive portfolio for the platform, including HBM4, LPCAMM2/SOCAMM2, and PM1763 storage solutions.
Samsung's HBM4 chips, which entered mass production in February, achieve a performance rate of 11.7 Gbps, with peak speeds reaching 13 Gbps.
"We plan to continuously strengthen our next-generation memory competitiveness through ongoing collaborations with global partners, including Nvidia," Song said.
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