SK hynix announced on June 18 that it has begun supplying samples of its next-generation high-performance DRAM product, the 7th generation High Bandwidth Memory (HBM4E) 12-layer, to major clients.
The company stated, "We were able to present the HBM4E 12-layer samples to our customers based on the HBM development capabilities and production know-how we have accumulated over the years," adding, "We will work closely with our key clients to ensure timely mass production."
This sample supply is expected to further solidify SK hynix's exclusive position in the next-generation AI memory market for NVIDIA.
Notably, the new product enhances both performance and energy efficiency compared to the previous generation HBM4. It achieves a maximum data processing speed of 16 Gbps per pin and improves energy efficiency by over 20%, significantly boosting the data processing capabilities essential for artificial intelligence (AI) learning and inference.
Additionally, HBM4E reduces data transmission latency through the latest interface and design optimization, ensuring stable operation even in high-bandwidth environments. The company anticipates that this will enhance processing efficiency for next-generation AI data centers and large-scale computing systems.
The HBM4E also utilizes an advanced MR-MUF process, achieving a capacity of 48GB based on a 12-layer stack while enhancing structural stability. It reduces thermal resistance by approximately 17% compared to HBM4, ensuring stable memory operation in high-performance computing environments.
Han Hyun, President and Chief Development Officer of SK hynix, emphasized, "We have established a foundation to continuously lead AI innovation by maintaining our industry-leading technological competitiveness and mass production capabilities with the HBM4E product. We will proactively implement the values demanded by the market based on collaboration with our partners, solidifying our technological leadership as a full-stack AI memory creator."
* This article has been translated by AI.
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