SEOUL, June 23 (AJP) - Samsung Electronics has engineered the industry's fastest UFS 5.0 memory chip designed to power next-generation on-device artificial intelligence applications, the company said on Tuesday.
As generative AI rapidly shifts from the cloud to local devices, the new memory chip is designed to significantly reduce latency and accelerate response times when running large language models (LLMs) in on-device AI environments.
Built on Samsung's ninth-generation V-NAND technology, the chip complies with the latest embedded memory interface standard from JEDEC. It delivers sequential read speeds of up to 10.8 gigabytes per second (GB/s) and write speeds of up to 9.5 GB/s—more than double the performance of the previous UFS 4.1 standard.
To address the stringent power constraints of mobile devices, the UFS 5.0 incorporates clock gating and multi-voltage technologies, boosting power efficiency by over 40 percent to significantly extend battery life.
It also features an ultra-compact package measuring 7.5 millimeters by 13 millimeters by 0.9 millimeters, which is 16.7 percent smaller than its predecessor. This form factor provides up to 1 terabyte of storage capacity while boosting design flexibility for smartphones, wearables, and extended reality (XR) headsets.
Samsung plans to begin mass production of the UFS 5.0 in the fourth quarter of this year.
"In the era of on-device AI, storage devices are evolving into a key driver defining AI experiences," said Jangseok Choi, head of Memory Product Planning at Samsung Electronics. "Samsung is setting a new standard for storage on the go and will continue to drive innovation for the next-generation mobile platform market."
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