Samsung Electronics Applies 2-Nanometer Process to HBM5, Boosting Speed by Over 50%

Samsung Electronics is implementing a gate-all-around (GAA) 2-nanometer foundry process for the base die of its next-generation high-bandwidth memory (HBM), HBM5. Building on its experience with the 4-nanometer base die used in HBM4 and HBM4E, the company aims to enhance the performance and power efficiency of the new HBM while expanding its customer base in artificial intelligence (AI) and high-performance computing (HPC), thereby strengthening the growth momentum of its foundry business.

In an interview with Samsung Electronics' semiconductor newsroom on July 27, Gu Ja-heum, Vice President and Head of Technology Development at Samsung Foundry, stated, "The HBM5 base die will utilize a 2-nanometer process with a GAA structure, enabling the implementation of silicon through-silicon vias (TSV) with even higher integration density."

This is the first time a Samsung executive responsible for foundry process development has detailed the strategy for the 2-nanometer base die for HBM5. In March, Hwang Sang-jun, Vice President of the Memory Business at Samsung's Device Solutions division, outlined the plan for the 2-nanometer application of HBM5 at NVIDIA's annual developer conference, GTC, from a foundry perspective.

The base die serves as a logic semiconductor that connects stacked DRAM core dies with external processors such as graphics processing units (GPUs) and central processing units (CPUs). As the demand for faster data processing speeds and improved power efficiency has increased, foundry front-end processes have been applied to the base die starting with HBM4, replacing traditional memory processes.

Samsung applied a 4-nanometer fourth-generation process to the base dies of HBM4 and HBM4E. This process has entered its third year of mass production, demonstrating validated performance and yield. Its flexibility in selecting gate spacing and transistor threshold voltage allows for optimization of performance, area, and leakage current for different products.

The HBM4E base die achieved operational speeds exceeding 14 gigabits per second (Gbps) by utilizing high-density, high-performance components. The efficient arrangement of metal wiring layers reduced power consumption and optimized heat dissipation paths. The HBM4 base die met performance and yield targets from the first sample, with approximately three months required from process preparation to results.

Gu noted, "We expect HBM5 to increase operational speeds by more than 50% compared to HBM4E, and we are preparing cutting-edge processes that will significantly improve not only operational speed but also power efficiency."

Samsung is also leveraging the base die of HBM to expand its customer base in AI and HPC. The company is applying the 4-nanometer process to the HBM4 base die and new LPU products for AI and HPC from U.S. AI companies. Recently, it has expanded collaborations with global firms like Broadcom, broadening its foundry customer base from a mobile focus to include AI, HPC, cloud service providers (CSPs), automotive, and robotics sectors.

The company is also pursuing diversification of customers for its 2-nanometer process. After starting mass production of its first-generation 2-nanometer process in the second half of last year, Samsung plans to produce mobile products based on an improved second-generation process in the second half of this year. Following the successful acquisition of orders for automotive-focused Tesla 2-nanometer products, the company has reported ongoing orders from several large AI, HPC, and CSP clients.

Samsung is providing a one-stop solution that integrates advanced packaging with HBM. In the AI and HPC sectors, it offers a combination of foundry processes, HBM, and advanced packaging, while entering the plug-type optical transceiver (PO) market in the data center sector. The company is also developing co-packaged optics (CPO) technology utilizing front-end processes and three-dimensional packaging technology.

Gu emphasized, "Based on the experience and technological competitiveness gained from the 4-nanometer HBM4 base die, we will proactively introduce the 2-nanometer process for HBM5 and expand customer collaborations across mobile, HBM, AI, HPC, automotive, and robotics to strengthen our leadership in foundry technology."