Samsung Electronics received recognition for its next-generation memory technology at the global memory technology conference, FMS 2026, winning awards in two categories.
According to Samsung Electronics, the company was awarded the 3D & NAND Innovation Award for its V10 BV-NAND and the Next-Gen Memory Award for its LPDDR5X-PIM during the Best of Show Awards held at FMS 2026.
The V10 BV-NAND represents a next-generation V-NAND technology that implements a super high-layer structure with over 400 layers. It features bonding vertical technology that vertically bonds wafers and a three-stack structure that connects V-NAND cells across three layers, enhancing storage capacity while reducing power consumption and heat generation. This technology is seen as a response to the growing demand for data storage in the AI era.
The LPDDR5X-PIM, awarded alongside the V10 BV-NAND, is the world's first low-power DRAM that incorporates processing-in-memory (PIM) technology. This structure allows for direct computation within the memory, minimizing data movement and improving both system performance and power efficiency. It is particularly noted as a key memory technology that can alleviate bottlenecks in large-scale AI computing environments, such as AI accelerators and high-performance computing (HPC).
With these awards, Samsung Electronics has reaffirmed its leadership in next-generation NAND and AI memory technologies, and it plans to further solidify its position as a leader in memory technology for the AI era.
The company will showcase its next-generation memory roadmap, AI memory solutions, and advanced storage technologies at FMS 2026, which runs until August 6, sharing its vision for future memory technologies with global clients.
* This article has been translated by AI.
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