Intel Foundry and ASML have announced the successful application of their next-generation lithography technology, High NA (Numerical Aperture) Extreme Ultraviolet (EUV) process, in production, along with their future technology roadmap.
On September 8, the companies shared their collaboration status at the SPIE Photomask Technology + Next-Generation EUV conference held in Monterey, California.
The technology has been applied to over 1 million wafers, including some layers of the next-generation processor, Panther Lake. An Intel Foundry representative stated, "We have achieved results that meet expectations in overlay precision, throughput, and operational efficiency."
Notably, products produced using High NA in the Intel 18A process have demonstrated performance equal to or exceeding that of products based on the existing 0.33 NA NXE platform.
To support customers, the companies are providing a 'layered placement' plan, stitching technology, and process design kit solutions that leverage the advantages of High NA while maintaining the existing 6-inch mask specifications.
Over the past three years, the two companies have led the 'Large Mask Format Initiative' to integrate the mask ecosystem, providing short-term support based on 6-inch masks while transitioning to the future 6x12-inch large mask format.
Christophe Fouquet, CEO of ASML, praised Intel Foundry as a key leader in the adoption of High NA, commending their efforts in standardization and mask innovation.
Naga Chandrasekaran, co-general manager of Intel Foundry, also stated, "We will continue to drive infrastructure development for the expansion of High NA EUV in collaboration with ASML and the broader industry ecosystem."
* This article has been translated by AI.
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