SK hynix has launched its U.S. operations, known as the 'U.S. Headquarters,' to enhance its business framework targeting major tech companies. The initiative aims to accelerate tailored strategies for clients by placing the head of next-generation high-bandwidth memory (HBM) development in charge of overall U.S. operations.
According to industry sources, SK hynix officially commenced its U.S. Headquarters on this day. The headquarters will be led by Ahn Hyun, the head of development, who has spearheaded the development of HBM and low-power memory modules for servers (SOCAMM). Ahn, who was appointed president in December 2024, previously led the development of next-generation mobile NAND solutions and high-performance SSDs for data centers.
The elevation of the U.S. operations to an executive-level organization reflects the significant shift in revenue concentration towards the U.S. In the first half of this year, SK hynix's sales in the U.S. reached 84.5648 trillion won, accounting for 64.1% of total sales of 131.895 trillion won. This figure represents more than a threefold increase from 27.8344 trillion won a year earlier. Revenue from its largest customer, estimated to be NVIDIA, reached 17.6087 trillion won, while another major tech client generated 17.1874 trillion won.
The decision to place the development head in the U.S. is based on the belief that the competitive landscape for HBM is shifting from standard products to customized solutions. During its third-quarter earnings conference call, SK hynix stated, "In addition to stable supply of standard HBM, customized products for each customer will become increasingly important," adding that it is closely collaborating with key partners on related projects. Given that HBM specifications must be tailored from the early stages of AI chip design, having the development team on-site is deemed essential.
The connection between 'development and production' in the U.S. will also be strengthened. In August, SK hynix broke ground on an HBM advanced packaging plant in West Lafayette, Indiana, with an investment of approximately $4 billion, aiming for mass production by the second half of 2029. The facility will handle the post-processing of HBM, which involves stacking and connecting DRAM wafers produced domestically, while also conducting next-generation R&D.
SK hynix has signed a memorandum of understanding (MOU) with Purdue University for collaboration on next-generation HBM development and testing. Once the U.S. Headquarters can promptly incorporate local demands into its designs and complete packaging in Indiana, the response speed is expected to improve significantly. The company has already secured over 50% of its production volume for 2027-2028 through long-term supply agreements (LTA). Securing volume with major tech clients and negotiating product specifications and delivery timelines will be crucial for future production lines.
The first task for the U.S. Headquarters is to obtain customer certifications for next-generation products. Following the supply of seventh-generation HBM (HBM4E) samples in June, the company is progressing through development and certification processes aligned with customer schedules. In the fourth quarter, HBM4 shipments are expected to surpass those of HBM3E, marking a shift in the main product line. As the generation transition cycle shortens, the speed at which customer specifications are developed and certified will determine the supply volume for the next generation, indicating that the role of the U.S. Headquarters will become increasingly significant.
Industry insiders noted, "As the HBM market rapidly shifts towards customization, having a local response system has become as crucial as technological competitiveness," emphasizing the intent to make swift development decisions close to customers.
* This article has been translated by AI.
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