SEOUL, March 17 (AJP) - Samsung Electronics Co., Ltd. announced on Tuesday at NVIDIA GTC 2026 the first public showcase of its next-generation High Bandwidth Memory 4E (HBM4E) and its role as a provider of a comprehensive memory and storage total solution for NVIDIA’s Vera Rubin platform.
The South Korean chip giant presented physical HBM4E chips and core die wafers, detailing a product that supports speeds of 16 gigabits-per-second per pin and a total bandwidth of 4.0 terabytes-per-second. Samsung confirmed it aims to complete sample shipments of HBM4E within the year to align with customer production schedules.
Leveraging its position as an integrated device manufacturer, Samsung highlighted its ability to integrate its sixth-generation 10-nanometer-class (1c) DRAM process, 4-nanometer foundry logic dies, and advanced packaging technologies. This vertical integration allows the company to supply a full suite of memory and storage required for NVIDIA’s next-generation Vera Rubin AI superchip platform, including HBM4 memory, which is currently in mass production with speeds up to 13 gigabits-per-second.
The company also displayed its SOCAMM2, an industry-first server memory module based on low-power LPDDR5X, and the PM1763 enterprise SSD utilizing the PCIe 6.0 interface. These solutions were demonstrated through NVIDIA SCADA workloads to showcase their performance in AI infrastructure.
During the event, Samsung introduced its Hybrid Copper Bonding (HCB) technology, which the company claims improves thermal resistance by more than 20 percent compared to traditional thermal compression bonding. This technology is intended to enable the vertical stacking of 16 or more layers for future HBM generations, with implementation expected to begin with 16-layer HBM4E products.
Samsung is also collaborating with NVIDIA to implement accelerated computing and Omniverse libraries to create digital twins of its manufacturing facilities. Samsung executives stated that HBM revenue in 2026 is projected to more than triple compared to 2025 levels as the company expands production capacity to meet global demand for AI infrastructure.
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