Samsung Develops Industry-First UFS 5.0 Memory Solution Optimized for On-Device AI

Samsung Electronics has developed the industry’s first next-generation UFS 5.0 memory solution optimized for the on-device AI era. As generative AI transitions to run directly on devices such as smartphones, wearables, and extended reality (XR) devices, the demand for high-performance, low-power storage solutions is surging. Samsung aims to lead the next-generation standard in this evolving landscape.

On June 23, Samsung announced the completion of its next-generation flash memory solution utilizing the latest UFS 5.0 interface from the semiconductor standardization organization JEDEC. This product is based on Samsung's ninth-generation V-NAND (V9) and is characterized by enhanced data transfer performance and power efficiency.

UFS 5.0 achieves an industry-leading sequential read speed of 10.8 GB per second and a sequential write speed of 9.5 GB per second, more than double the performance of the previous UFS 4.1 standard.

With rapid storage and retrieval capabilities in high-performance environments, including large AI models, high-resolution content, and real-time data processing, UFS 5.0 is expected to significantly improve AI service response times and user experiences.

As on-device AI expands, mobile storage is evolving from mere data storage to a crucial infrastructure supporting AI computations. The execution of generative AI on smartphones will lead to a substantial increase in the processing of large language models (LLMs) and image and video data, highlighting the growing importance of high-speed storage.

Power efficiency has also seen significant improvements. UFS 5.0 incorporates clock gating, which disables unused circuits, and multi-voltage technology that optimizes voltage for each circuit. These advancements have increased power efficiency by over 40% compared to its predecessor, reducing power consumption during data transfers and extending battery life for mobile devices.

The product size has also been reduced. Samsung has implemented a package measuring 7.5 mm wide, 13 mm long, and 0.9 mm high, shrinking the area by approximately 16.7% compared to the previous version. This reduction enhances design flexibility for various form factors, including smartphones, smartwatches, AI wearables, and XR devices, with plans to support capacities of up to 1 TB.

Samsung plans to begin mass production of UFS 5.0 in the fourth quarter of this year, with intentions to expand supply to next-generation devices, including flagship smartphones, XR headsets, and AI wearables.

Choi Jang-seok, head of product planning for Samsung's memory division, stated, "In the era of on-device AI, storage devices are becoming a key factor in determining AI experiences. Through the industry-first development of UFS 5.0, we aim to set a new standard for next-generation mobile storage and continue to lead innovations in AI mobility."